Resumen En este trabajo reportamos el análisis estructural, morfología superficial, ordenamiento magnético, respuesta dieléctrica y característica óptica de la nueva perovskita compleja Dy2BiFeO6. Las muestras fueron producidas mediante reacción de estado sólido. El análisis cristalográfico fue realizado a través de refinamiento Rietveld de los patrones experimentales de rayos X. Los resultados muestran que este material cristaliza en una perovskita ortorrómbica correspondiente al grupo espacial Pnma (#62). Por medio del ajuste de Curie-Weiss a la respuesta de la susceptibilidad magnética en función de la temperatura se estableció que el ordenamiento magnético se relaciona con una transición paramagnético-antiferromagnético con una temperatura de Weiss 9=-18,5 K, la cual es acorde con el comportamiento del inverso de la susceptibilidad en función de la temperatura, y una temperatura de Néel TN=50,8 K. La constante de Curie permitió determinar un momento magnético efectivo de 15,7 µB. Medidas de magnetización en función del campo aplicado a T=50 K, muestran un débil comportamiento histerético, que corrobora el ordenamiento magnético presente a esa temperatura. Mediciones de la constante dieléctrica en función de la frecuencia aplicada a temperatura ambiente dan como resultado una alta constante dieléctrica relativa a bajas frecuencias (ε=780). La curva de reflectancia en función de la longitud de onda revela el comportamiento típico de un material de tipo perovskita doble y permite la obtención de la brecha de energía de 2,74 eV característico de un material semiconductor.

Abstract We report structural analysis, surface morphology, magnetic ordering, dielectric response, optical feature and the electronic structure of the Dy2BiFeO6 novel complex perovskite. The samples were produced by the standard solid-state reaction recipe. Crystallographic analysis was performed by Rietveld refinement of experimental X-ray diffraction patterns. Results show that this material crystallizes in a perovskite with orthorhombic structure, which corresponds to the Pnma (#62) space group. From the Curie-Weiss fitting on the curve of susceptibility as a function of temperature we establish that the ordering corresponds to a paramagnetic-antiferromagnetic transition, with a Weiss temperature 9=-18,5 K, which is compatible with the behavior of the inverse of susceptibility as a function of temperature, and a Néel temperatura TN=50,8 K. The Curie constant allowed for us to obtain an effective magnetic moment of 15,7 µB. The result of magnetization as a function of the applied field, measured at T=50 K, shows a magnetic hysteresis behavior that corroborate the magnetic ordering present for this temperature value. Measurements of the dielectric constant as a function of applied frequencies at room temperature give as a result a high relative dielectric constant (ε=780). The reflectance curve as a function of the wavelength reveals the typical behavior of a double perovskite-like material and permits to obtain the energy gap 2,74 eV, which is characteristic of a semiconductor material.

En el presente artículo se reporta la síntesis y caracterización de la conductividad del material superconductor RE0.5Y0.5Ba2Cu3O7-d (RE=Sm, Gd, Dy, Ho, Eu, Yb). Las muestras fueron producidas mediante la técnica estándar de reacción de estado sólido. El refinamiento Rietveld de los datos de difracción de rayos x permitió establecer la apropiada distribución cristalina de las tierras raras y del Ytrio para crear el efecto de disparidad de peso planar (PWD) en forma de capas alternadas. Mediciones de resistividad DC mostraron que la temperatura crítica (Tc) aumenta sustancialmente cuando se sustituye en proporciones exactas 50-50 de tierra rara (Sm, Gd, Dy, Ho, Eu, Yb) e Ytrio. Se determine una temperatura crítica volumétrica Tc ≈ 94.3 K mediante el criterio del máximo en la derivada numérica de la resistividad eléctrica con respecto a la temperatura para las muestras en estudio. La correlación de los exponents críticos con la dimensionalidad de los sistemas de fluctuaciones para cada régimen Gaussiano se establecieron por medio de la teoría de Aslamazov-Larkin. Los exponentes genuinamente críticos se interpretaron mediante el modelo 3D-XY de modo que corresponden a la clase de universalidad dinámica predicha por el modelo E.

Synthesis and conductivity characterization of the RE0.5Y0.5Ba2Cu3O7-d (RE=Sm, Gd, Dy, Ho, Eu, Yb) superconducting materials are reported. Samples were produced by the standard solid state reaction method. Rietveld-like refinement of x-ray diffraction data permit to establish the crystalline appropriated distribution of rare earth and yttrium to create substantial planar weight disparity (PWD) in alternating layers. DC resistivity measurements reveal the improvement of the critical temperature (Tc) when substitution of exact 50-50 mix of rare earth (Sm, Gd, Dy, Ho, Eu, Yb) and Yttrium is performed. A bulk Tc ≈ 94.3 K was determined by the criterion of the maximum in the temperature derivative of electrical resistivity for the analyzed samples. The correlations of the critical exponents with the dimensionality of the fluctuation system for each Gaussian regime were performed by using the Aslamazov-Larkin theory. The genuinely critical exponent is interpreted by the 3D-XY model as corresponding with the dynamical universality class of the E-model.

Thermal fluctuations in the electric conductivity of YBa2Cu3O7 - delta superconducting thin films grown on Sr2YSbO6 novel substrate materials in the film form were experimentally studied. YBa2Cu3O7 - delta films were grown by using a dc-technique on Sr2YSbO6 substrates, which were produced by rf magnetron sputtering. X-ray diffraction analysis evidenced that the Sr2YSbO6 films grow on conventional SrTiO3 substrates in a preferential orientation along the (100) planes direction with lattice parameter a=4,43() Å. The YBa2Cu3O7 - delta thin films, grown on Sr2YSbO6 films, exhibit an oriented growth in the (001) crystallographic direction, with lattice constant c=11,65(9) Å. Morphological characterizations were performed by means atomic force microscopy. Experiments of electrical resistivity show that the YBa2Cu3O7 - delta films present a normal-superconducting transition with critical temperature Tc=82,33 K. Fluctuation analysis for the YBa2Cu3O7 - delta thin films were performed by utilizing the concept of logarithmic derivative of the conductivity excess. Above the critical temperature Tc we experimentally determine the occurrence of Gaussian 3D, 2D and fractal fluctuation regimes. A genuinely critical region identified by the exponent lambdaCR=0,35 were obtained close to Tc. This critical regime is effectively described by the 3D-XY model.

We report several ab initio calculations performed over the A2FeMoO6 (A=Ba, Ca) double perovskite. Results show that it is an insulator for the spin up orientation and conductor for the other one. We investigate the electronic structure of A2FeMoO6 by means calculations of density of states for both spin orientations, based on the Density Functional Theory and the Linearized Augmented Plane Waves method. For the exchange correlation potential we chose the Generalized Gradient Approximation since this potential consider the difference between the electronic densities for the two distinct spin orientations from the beginning. The density of states is calculated by the histogram method and the position of the Fermi level is found by integrating over the density of states for both spin orientations. With the calculated densities of states, the half metallic properties of these compounds can be observed with the position of the Fermi level. Our results are in agreement of the Sarma's methodology, who considers a new mechanism for the magnetic interactions responsible for the magnetism on the A2FeMoO6 family. We also calculate the cell dimensions that minimize the total energy for each configuration using the Murnaghan equation state.

We report conductivity fluctuation measurements in the La1.82Sr0.18CuO4 high temperature superconducting material. The conductivity fluctuation analysis was performed by utilizing the concept of the logarithmic derivative of the conductivity excess. Close and above the critical temperature Tc, we experimentally determine the occurrence of Gaussian and critical fluctuation regimes. Systematic measurements of conductivity as a function of temperature were performed for several values of transport current j. Fluctuation analysis close to the zero resistivity temperature Tc0 was performed and we clearly identified a characteristic exponent, which is analyzed by the dynamical scaling theory and considering a percolation-like transition in a frustrated and disordered system. The observation of a glass-like behavior in our experiments permits to interpret our results as corresponding to a vortex-glass regime.

Systematic measurements on Hall and longitudinal resistivities as a function of temperature in Hg1-xRe xBa2Ca2Cu3O8+δ (x=0.18) ceramic samples were effectuated. These measurements were performed in magnetic fields H=0, 10, 20, 40 and 50 kOe, applied perpendicularly to the transport current orientation. In the normal phase, the Hall coefficient is positive and may be accurately fitted to R H = 1/aT + b. The Hall angle varies approximately as predicted by Anderson's formula. When the temperature approaches from above the mean-field critical temperature Tc, the Hall resistivity decreases abruptly as a consequence of thermal fluctuations. Below Tc and for H = 10and 20 kOe, the Hall response changes signal, going passing through a minimum and becoming positive again before the zero resistance state is obtained. For stronger applied fields, the Hall resistivity remains positive in the mixed phase, though its qualitative shape, preserving the local minimum below Tc. We ascribe the double sign reversal feature to combined effects of thermal fluctuations and vortex motion. Close to the zero resistance state, the Hall resistivity varies as a power law of the longitudinal resistivity, with a field-independent exponent. This result may be interpreted as evidence of a vortex-glass transition.

Reportamos mediciones de las resistividades longitudinal y Hall en función de la temperatura para muestras cerámicas de Hg1-xRe xBa2Ca2Cu3O8+δ (x=0.18). Tales mediciones se efectuaron en presencia de campos magnéticos H=0, 10, 20, 40 y 50 kOe, aplicados en dirección perpendicular a la orientación de la corriente de transporte. En la fase normal, el coeficiente Hall es positivo y se ajusta a la relación R H = 1/aT + b. El ángulo de Hall varía aproximadamente conforme lo predice la fórmula de Anderson. Por encima y muy próximo de la temperatura crítica de campo medio Tc, la resistividad Hall disminuye abruptamente a causa de las fluctuaciones térmicas. Por debajo de Tc, para H = 10 y 20 kOe, la respuesta Hall cambia de signo, pasa a través de un mínimo local y vuelve a ser positivo antes de alcanzarse el estado de resistencia nula. En campos mayores, la resistividad Hall permanece siempre positiva en el estado mixto pero conserva su forma, presentando un mínimo local por debajo de Tc. Nosotros atribuimos el doble cambio de signo a efectos combinados de fluctuaciones térmicas y movimiento de vórtices. Cerca del estado de resistencia cero, la resistividad Hall varía como una ley de potencias de la resistividad longitudinal con un exponente independiente del valor del campo magnético. Este resultado es interpretado como evidencia de una transición de tipo vidrio de vórtices.